On the Photo‐Carriers Dynamic Regulation by Piezo‐Phototronic Effect in Metal‐Oxide–Semiconductor Tunneling Junction

The piezo-phototronic effect can modulate the dynamics of photo-generated carriers by utilizing external-strain–induced piezoelectric charges (piezo-charges). Most current researches focus on modulation optoelectronic properties p–n junctions. There are only a few studies focusing metal-oxide–semiconductor (MOS) structures. In this work, PEDOT:PSS/Al2O3/n-ZnO tri-layer MOS tunneling junction is fabricated and its photo-carriers dynamic performances systematically investigated. photoresponsivity to 365 nm laser illumination reduced because negative piezo-charges generated at Al2O3/n-ZnO interface. Meanwhile but unexpectedly, similar phenomenon positive interface observed. in-depth working mechanisms carefully investigated analyzing energy band diagram. Strain induced could feasibly adjust intermediate oxide layer's barrier height width so that be efficiently modulated effect, leading effective control over junction's corresponding photoresponses. This work provides an understanding for guidance subsequent coupling effect.